smd type transistors 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter FCX617 features 2w power dissipation. 12a peak pulse current. excellent h fe characteristicsupto12amps. extremely low saturation voltage e.g. 8mv typ. extremely low equivalent on-resistance. r ce(sat) 50m at 3a. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 15 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 5v peak pulse current i c 3a continuous collector current i cm 12 a base current i b 500 ma power dissipation p tot 1w operating and storage temperature range t j, t stg -55to+150 s m d ty p e i c t r a n s i s t o r s s m d ty p e smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =100a 15 v collector-emitter breakdown voltage * v (br)ceo i c =10ma 15 v emitter-base breakdown voltage v (br)ebo i e =100a 5v collector cut-off current i cbo v cb =10v 0.3 100 na collector emitter cut-off current i ces v ce =10v 0.3 100 na emitter cut-off current i ebo v eb =4v 0.3 100 na collector-emitter saturation voltage * v ce( sat) i c =0.1a, i b =10ma i c =1a, i b =10ma i c =3a, i b =50ma i c =4a, i b =50ma i c =5a, i b =50ma 8 70 150 --------- - 14 100 230 300 400 mv base-emitter saturation voltage * v be( sat) i c =3a, i b =50ma 0.89 1.0 v base-emitter on voltage * v be(on ) i c =3a, v ce =2v 0.82 1.0 v static forward current transfer ratio* h fe i c =10ma, v ce =2v i c =200ma,v ce =2v i c =3a,v ce =2v i c =5a,v ce =2v i c =12a,v ce =2v 200 300 200 150 ----- 415 450 320 240 80 transitional frequency f t i c =50ma, v ce =10v f=50mhz 80 120 mhz output capacitance c obo v cb =10v, f=1mhz 30 40 pf turn-on time t (on) i c =3a, v cc =10v 120 ns turn-off time t (off) i b1 =i b2 =50ma 160 ns * pulse test: tp = 300 s; d 0.02. marking marking 617 smd type transistors FCX617 s m d ty p e i c t r a n s i s t o r s s m d ty p e smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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